Cu doping An effective method for improving optoelectronic properties of sprayed SnS thin films Conference Paper


Author(s): Ninan G G; Rajeshmon V G; Kartha, C.S.; Vijayakumar, K.P
Title: Cu doping An effective method for improving optoelectronic properties of sprayed SnS thin films
Keywords: Thin films; Optical properties; Electrical properties; Spray techniques
Conference Title: AIP Conference Proceedings
Conference Location: 1591
Publisher: Unknown  
Date Published: 2014
Start Page: 1440
End Page: 1442
DOI/URL:
Notes: --- - "SnS thin films were deposited using Chemical Spray Pyrolysis (CSP) technique at a substrate temperature of 415 \xC2\xB0C. Resistivity of pristine SnS thin film was 120 \xCE\xA9.cm. In order to decrease resistivity, in-situ copper doping was done and its effects on the structural, optical and electrical properties were studied. Percentage of Cu was varied as 2%, 4%, 6%, 8% and 10% of tin in the precursor solution. Resistivity decreased with minimum resistivity of 1.6 \xCE\xA9.cm for the sample doped with 6% copper. Beyond 6 % doping, resistivity increased. All the films were n type irrespective of doping. \xC2\xA9 2014 AIP Publishing LLC." - "<p>Export Date: 11 February 2015</p>"
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